Combined Effects Of Graded And Setback Layers On The Algaas/Gaas Hbt Current-Voltage Characteristics
Abbreviated Journal Title
HETEROJUNCTION BIPOLAR-TRANSISTORS; ABRUPT; RECOMBINATION; TRANSPORT; MODEL; GAAS; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The combined effects of graded and setback layers (W-G and W-1) on the AlGaAs/GaAs heterojunction bipolar transistor (HBT) d.c. performance are investigated, and an analytical model which can describe the behavior of such HBTs is presented. The HBT base and collector currents accounting for the variation of the conduction and valence bands due to the presence of W-G and W-1 are also calculated. It is shown that including W-G and W-1 actually degrades the HBT current gain at low current 0 less than or equal to W-G less than or equal to 300 Angstrom or W-1 = 0 and 150 Angstrom less than or equal to W-G less than or equal to 300 Angstrom are used. The model predictions compare favorably with results calculated from a numerical model.
"Combined Effects Of Graded And Setback Layers On The Algaas/Gaas Hbt Current-Voltage Characteristics" (1995). Faculty Bibliography 1990s. 2998.