Current Transport In Algaas/Gaas Heterojunction Bipolar-Transistors Operating Between 300 And 500 K

    Authors

    C. S. Ho; J. J. Liou; A. Parthasarathy; S. F. Lin;C. I. Huang

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    P-N; GAAS; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The current transport in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) operating in the temperature range of 300-500 K is investigated based on an analytical model including the lattice heating effect. It is found that an uneven increase in the base and collector currents gives rise to the current gain degradation at high temperatures. In addition, the study suggests that the effect of lattice heating becomes more important if the HBT area is reduced and/or the ambient temperature is increased. Experimental data and results simulated from a device simulator are included in support of our finding.

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    10

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    1759

    Last Page

    1763

    WOS Identifier

    WOS:A1995RV65700005

    ISSN

    0038-1101

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