2-Dimensional Numerical-Analysis For Extracting The Effective Channel-Length Of Short-Channel Mosfets

    Authors

    R. Narayanan; A. Ortizconde; J. J. Liou; F. J. G. Sanchez;A. Parthasarathy

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Device simulations are, carried out to study the physical mechanisms underlying the effective channel length of MOSFETs. Furthermore, the adequacy of widely used methods for extracting such a parameter is examined using different free-carrier mobility models implemented in the device simulator. It is shown that the conventional definition for the effective channel length using the locations of source/drain junctions is questionable. Based on the simulation results, a more consistent and accurate definition for determining the effective channel length is also proposed.

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    6

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    1155

    Last Page

    1159

    WOS Identifier

    WOS:A1995RA46000006

    ISSN

    0038-1101

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