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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

Physics; Applied

Abstract

A nonlinear switch formed by the integration of an overmoded multi‐quantum‐well (MQW) section with disordered input and output branching waveguides is presented. The area‐selective disordering of GaAs/AlGaAs MQWs is achieved by diffusion of group III vacancies generated by etching of the surface oxide. The absorption edge of the disordered MQW regions was shifted by 71 nm and the disordered ridge waveguides had a loss figure of 8 dB/cm. Time‐resolved optical pump‐probe measurements were performed on an integrated switch that had more than a 5:1 power split between the two output ports. The measured signal recovery of the switch had a time constant of 110 ps.

Journal Title

Applied Physics Letters

Volume

66

Issue/Number

1

Publication Date

1-1-1995

Document Type

Article

Language

English

First Page

79

Last Page

81

WOS Identifier

WOS:A1995PZ81800027

ISSN

0003-6951

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