Ultrafast Recovery-Time In A Strained Ingaas-Alas P-I-N Modulator

    Authors

    H. Wang; P. Likamwa; M. Ghisoni; G. Parry; P. N. Stavrinou; C. Roberts;A. Miller

    Comments

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    Abbreviated Journal Title

    IEEE Photonics Technol. Lett.

    Keywords

    WELL OPTICAL MODULATORS; RESOLVED MEASUREMENTS; QUANTUM WELLS; TRANSPORT; Engineering, Electrical & Electronic; Optics; Physics, Applied

    Abstract

    We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.

    Journal Title

    Ieee Photonics Technology Letters

    Volume

    7

    Issue/Number

    2

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    173

    Last Page

    175

    WOS Identifier

    WOS:A1995QG41200014

    ISSN

    1041-1135

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