Title

Ultrafast Recovery-Time In A Strained Ingaas-Alas P-I-N Modulator

Authors

Authors

H. Wang; P. Likamwa; M. Ghisoni; G. Parry; P. N. Stavrinou; C. Roberts;A. Miller

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Photonics Technol. Lett.

Keywords

WELL OPTICAL MODULATORS; RESOLVED MEASUREMENTS; QUANTUM WELLS; TRANSPORT; Engineering, Electrical & Electronic; Optics; Physics, Applied

Abstract

We have performed sub-picosecond resolution measurements of the optical recovery of InGaAs-AlAs multiple quantum well p-i-n structures that exhibit strong excitonic features, a clear quantum confined Stark effect and low photocurrent. The recovery times, measured as a function of applied electrical bias and optical excitation density, are much shorter than that predicted by carrier thermionic emission rates from the quantum wells. An observed ultrafast recovery time of 28 ps makes this material system promising as a fast modulator with low thermal dissipation or as a saturable absorber for semiconductor and fiber laser mode locking.

Journal Title

Ieee Photonics Technology Letters

Volume

7

Issue/Number

2

Publication Date

1-1-1995

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/68.345913

Language

English

First Page

173

Last Page

175

WOS Identifier

WOS:A1995QG41200014

ISSN

1041-1135

Recommended Citation

"Ultrafast Recovery-Time In A Strained Ingaas-Alas P-I-N Modulator" (1995). Faculty Bibliography 1990s. 3024.
https://stars.library.ucf.edu/facultybib1990/3024