Infrared To Ultraviolet Measurements Of Two-Photon Absorption And N(2) In Wide Bandgap Solids

    Authors

    R. DeSalvo; A. A. Said; D. J. Hagan; E. W. VanStryland;M. SheikBahae

    Comments

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    Abbreviated Journal Title

    IEEE J. Quantum Electron.

    Keywords

    2-PHOTON ABSORPTION; NONLINEAR REFRACTION; ZINCBLENDE SEMICONDUCTORS; OPTICAL-PROPERTIES; SINGLE-BEAM; Z-SCAN; DISPERSION; ANISOTROPY; SPECTRA; RULES; Engineering, Electrical & Electronic; Optics; Physics, Applied

    Abstract

    The bound electronic nonlinear refractive index, n(2), and two-photon absorption (2PA) coefficient, beta, are measured in a variety of inorganic dielectric solids at the four harmonics of the Nd:YAG laser using Z scan, The specific materials studied are: barium fluoride (BaF2), calcite (CaCO3), potassium bromide (KBr), lithium fluoride (LiF), magnesium fluoride (MgF2), sapphire (Al2O3), a tellurite glass (75%TeO2 + 20%ZnO + 5%Na2O) and fused silica (SiO2). We also report n(2) and beta in three second-order, chi((2)), nonlinear crystals: potassium titanyl phosphate (KTiOPO4 or KTP), lithium niobate (LiNbO3), and beta-barium berate (beta-BaB2O4 or BBO). Nonlinear absorption or refraction can alter the wavelength conversion efficiency in these materials, The results of this study are compared to a simple two-parabolic band model originally developed to describe zincblende semiconductors, This model gives the bandgap energy (E(g)) scaling and spectrum of the change in absorption, The dispersion of n(2) as obtained from a Kramers-Kronig transformation of this absorption change scales as E(g)(4-). The agreement of this theory to data for semiconductors was excellent, However, as could be expected, the agreement for these wide bandgap materials is not as good, although general trends such as increasing nonlinearity with decreasing bandgap energy can be seen.

    Journal Title

    Ieee Journal of Quantum Electronics

    Volume

    32

    Issue/Number

    8

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    1324

    Last Page

    1333

    WOS Identifier

    WOS:A1996VA81400008

    ISSN

    0018-9197

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