Bias, Frequency, And Area Dependencies Of High Frequency Noise In Algaas/Gaas Hbt'S

    Authors

    J. J. Liou; T. J. Jenkins; L. L. Liou; R. Neidhard; D. W. Barlage; R. Fitch; J. P. Barrette; M. Mack; C. A. Bozada; R. H. Y. Lee; R. W. Dettmer;J. S. Sewell

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTORS; RESISTANCE; MODEL; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is studied, and an improved physical noise model is developed, Unlike the conventional high frequency noise model, which considers only the bias current dependence, the present model includes both the effects of voltage and current on the noise behavior, In addition, the frequency- and area-dependent natures of the HBT noise at very high frequencies are incorporated in the model. It is found that the voltage dependence of the high frequency noise in the HBT results from the self-heating effect which gives rise to a higher HBT lattice temperature than the ambient temperature. Also, the free-carrier transport delay time must be considered to properly model the frequency dependence of noise since the inverse of this time is comparable with the frequency, Furthermore, the area dependence of noise is dominated bg changes in the base resistance and emitter-base junction capacitance Results for the minimum noise factor calculated from the model compare favorably with those obtained ii-om measurements.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    43

    Issue/Number

    1

    Publication Date

    1-1-1996

    Document Type

    Article

    Language

    English

    First Page

    116

    Last Page

    122

    WOS Identifier

    WOS:A1996TN38600017

    ISSN

    0018-9383

    Share

    COinS