Title

Base Transit Time Of The Bipolar Transistor In Quasi-Saturation

Authors

Authors

Y. Dai;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering, Electrical & Electronic; Physics, Applied

Abstract

The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The base transit time increases with quasi-saturation effect and reaches the maximum when the bipolar transistor is in hard saturation.

Journal Title

Ieee Transactions on Electron Devices

Volume

44

Issue/Number

9

Publication Date

1-1-1997

Document Type

Article

Language

English

First Page

1558

Last Page

1560

WOS Identifier

WOS:A1997XR10800031

ISSN

0018-9383

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