Base Transit Time Of The Bipolar Transistor In Quasi-Saturation

    Authors

    Y. Dai;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The base transit time increases with quasi-saturation effect and reaches the maximum when the bipolar transistor is in hard saturation.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    44

    Issue/Number

    9

    Publication Date

    1-1-1997

    Document Type

    Article

    Language

    English

    First Page

    1558

    Last Page

    1560

    WOS Identifier

    WOS:A1997XR10800031

    ISSN

    0018-9383

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