Base Transit Time Of The Bipolar Transistor In Quasi-Saturation
Abbreviated Journal Title
IEEE Trans. Electron Devices
Engineering, Electrical & Electronic; Physics, Applied
The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The base transit time increases with quasi-saturation effect and reaches the maximum when the bipolar transistor is in hard saturation.
Ieee Transactions on Electron Devices
"Base Transit Time Of The Bipolar Transistor In Quasi-Saturation" (1997). Faculty Bibliography 1990s. 3072.