High-Dose Carbon Implantation In Nickel

    Authors

    Z. H. Zhang; L. Chow; Y. K. Tao; K. D. Paschke;W. K. Chu

    Comments

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    Abbreviated Journal Title

    Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms

    Keywords

    BACKSCATTERING ANALYSIS; Instruments & Instrumentation; Nuclear Science & Technology; Physics, ; Atomic, Molecular & Chemical; Physics, Nuclear

    Abstract

    The diffusion of ion-implanted carbon in single crystal and polycrystalline nickel has been investigated. 400 keV high dose (8 x 10(17)/cm2) carbon ions were implanted into nickel samples, followed by annealing in flowing Ar gas at temperatures ranging from 300 to 1010-degrees-C. The diffusion of carbon atoms was studied using Rutherford backscattering spectrometry (RBS) and non-Rutherford proton elastic scattering combined with the channeling technique. In the case of single crystal nickel, segregation occurred at 400-degrees-C and significant carbon diffusion was observed at 600-degrees-C. After long-term annealing at 850-degrees-C/4 h plus 470-degrees-C/4 h, no measurable carbon remained in the implanted layer. For polycrystalline nickel, the segregation of the implanted carbon also occurred at 400-degrees-C. All of the implanted carbon was diffused out of the implanted layer at 650-degrees-C.

    Journal Title

    Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms

    Volume

    80-1

    Publication Date

    1-1-1993

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    485

    Last Page

    490

    WOS Identifier

    WOS:A1993LK38000105

    ISSN

    0168-583X

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