The Controlled Disordering Of Quantum-Wells Using Surface Oxidation

    Authors

    S. Shi; P. L. K. Wa; A. Miller; J. Pamulapati; P. Cooke;M. Dutta

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Semicond. Sci. Technol.

    Keywords

    DIFFUSION; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter

    Abstract

    A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

    Journal Title

    Semiconductor Science and Technology

    Volume

    9

    Issue/Number

    8

    Publication Date

    1-1-1994

    Document Type

    Letter

    Language

    English

    First Page

    1564

    Last Page

    1566

    WOS Identifier

    WOS:A1994PA82700021

    ISSN

    0268-1242

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