Title

The Controlled Disordering Of Quantum-Wells Using Surface Oxidation

Authors

Authors

S. Shi; P. L. K. Wa; A. Miller; J. Pamulapati; P. Cooke;M. Dutta

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Semicond. Sci. Technol.

Keywords

DIFFUSION; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter

Abstract

A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

Journal Title

Semiconductor Science and Technology

Volume

9

Issue/Number

8

Publication Date

1-1-1994

Document Type

Letter

Language

English

First Page

1564

Last Page

1566

WOS Identifier

WOS:A1994PA82700021

ISSN

0268-1242

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