Wet And Dry Etching Of Ligao2 And Lialo2

    Authors

    J. W. Lee; S. J. Pearton; C. R. Abernathy; J. M. Zavada;B. L. H. Chai

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Electrochem. Soc.

    Keywords

    MOLECULAR-BEAM EPITAXY; BUFFER LAYER; GAN; GROWTH; SAPPHIRE; SUBSTRATE; Electrochemistry; Materials Science, Coatings & Films

    Abstract

    LiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in some acid solutions, including HF, at rates between 150 and 40,000 Angstrom/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl-2/Ar or CH4/H-2/Ar under electron cyclotron resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metallorganic/hydride counterparts.

    Journal Title

    Journal of the Electrochemical Society

    Volume

    143

    Issue/Number

    8

    Publication Date

    1-1-1996

    Document Type

    Letter

    Language

    English

    First Page

    L169

    Last Page

    L171

    WOS Identifier

    WOS:A1996VC70600004

    ISSN

    0013-4651

    Share

    COinS