Electrical Network Model For Sprite Detectors

    Authors

    J. A. Whitlock; G. D. Boreman; H. K. Brown;A. E. Plogstedt

    Comments

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    Abbreviated Journal Title

    Opt. Eng.

    Keywords

    INFRARED IMAGING SYSTEMS; DETECTORS; SIGNAL PROCESSING; MODULATION TRANSFER-FUNCTION; MTF; Optics

    Abstract

    Impedance measurements were made on SPRITE (signal processing in the element) detectors. The resistive contributions were found to contain a contact resistance term, along with a term proportional to the semiconductor material length between terminals. The capacitive contributions were strongly frequency dependent and were largely independent of material length. This behavior would appear to be caused by nonohmic contacts at the metal-semiconductor interfaces where the SPRITE is bonded to its external electrical connections. When the SPRITEs were illuminated, the resistance decreased as expected, but the capacitance showed a sizable increase as well. A T-network model is developed that is consistent with the set of two-terminal impedance measurements. A model of this type should provide a useful starting point for electronics optimizations in SPRITE systems, including the design of the bias source, the readout mechanism, and the preamplifier.

    Journal Title

    Optical Engineering

    Volume

    30

    Issue/Number

    11

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    1784

    Last Page

    1787

    WOS Identifier

    WOS:A1991GP20900020

    ISSN

    0091-3286

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