Statistical And Numerical-Method For Mosfet Integrated-Circuit Sensitivity Simulation Using Spice

    Authors

    W. W. Wong; R. S. Winton;J. J. Liou

    Comments

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    Keywords

    METAL-OXIDE-SEMICONDUCTOR STRUCTURES; SIMULATION; INTEGRATED CIRCUITS; SENSITIVITY; Engineering, Electrical & Electronic

    Abstract

    Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit are most influential on its performance and how variations of the device and process parameters affect the circuit output responses. The paper presents a systematic approach for analysis of metal-oxide-semiconductor field effect transistor (MOSFET) integrated circuit DC performance as a function of channel length and width variations. The method, which involves an algorithm based on the Tellegen theorem and a database that contains statistical information on MOSFET process parameters, is implemented in the widely used SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is included to illustrate the usefulness of the method.

    Journal Title

    Iee Proceedings-G Circuits Devices and Systems

    Volume

    138

    Issue/Number

    1

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    77

    Last Page

    82

    WOS Identifier

    WOS:A1991EV25000015

    ISSN

    0956-3768

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