Cayalo4 - New Low-Loss Substrate Material For Epitaxial-Growth Of Superconducting Thin-Films

    Authors

    K. H. Young;B. H. T. Chai

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 2 - Lett.

    Keywords

    CAYAIO4; YBA2CU3O7-DELTA; TL2BA2CACU2O8; LOW-LOSS SUBSTRATE; LASER; ABLATION; MICROWAVE PROPERTY; INTERDIFFUSION; MICROWAVE; Physics, Applied

    Abstract

    A twin-free substrate material, CaYAlO4, was synthesized and used for the epitaxial growth of single crystal YBa2CU3O7-delta and Tl2Ba2CaCU2O8 thin films for the first time. The lattice parameters of ttus new substrate are a = b = 3.648 angstrom and c= 11.89 angstrom. The dielectric properties, similar to those of LaAlO3, are 20(dielectric constant) and 4 x 10(-5) (loss tangent) at 5 GHz and 77 K. Initial attempts at film growth on this substrate indicate degradation of both superconducting and microwave properties possibly due to interdiffusion.

    Journal Title

    Japanese Journal of Applied Physics Part 2-Letters

    Volume

    30

    Issue/Number

    12B

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    L2116

    Last Page

    L2119

    WOS Identifier

    WOS:A1991GX90800016

    ISSN

    0021-4922

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