Title

Modeling The Current-Dependent Ft For Algaas/Gaas Heterojunction Bipolar-Transistor Design

Authors

Authors

J. S. Yuan

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

LAYER; FREQUENCY; TIME; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The modeling of current-dependent cut-off frequency f(T) for AlGaAs/GaAs heterojunction bipolar transistors has been investigated. The analytical equations developed account for high-current base widening, current-dependent collector-base junction capacitance, and proton and nonproton implanted collectors. The ballistic transport and velocity overshoot effects are accounted for in the modeling equations. Experimental results reported in the literature are compared in support of the model utility and accuracy. Optimization of heterojunction bipolar transistor design is discussed based on current-dependent f(T) analysis.

Journal Title

Solid-State Electronics

Volume

34

Issue/Number

10

Publication Date

1-1-1991

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/0038-1101(91)90106-9

Language

English

First Page

1103

Last Page

1107

WOS Identifier

WOS:A1991GJ36300011

ISSN

0038-1101

Recommended Citation

"Modeling The Current-Dependent Ft For Algaas/Gaas Heterojunction Bipolar-Transistor Design" (1991). Faculty Bibliography 1990s. 380.
https://stars.library.ucf.edu/facultybib1990/380