Modeling The Current-Dependent Ft For Algaas/Gaas Heterojunction Bipolar-Transistor Design

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    LAYER; FREQUENCY; TIME; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The modeling of current-dependent cut-off frequency f(T) for AlGaAs/GaAs heterojunction bipolar transistors has been investigated. The analytical equations developed account for high-current base widening, current-dependent collector-base junction capacitance, and proton and nonproton implanted collectors. The ballistic transport and velocity overshoot effects are accounted for in the modeling equations. Experimental results reported in the literature are compared in support of the model utility and accuracy. Optimization of heterojunction bipolar transistor design is discussed based on current-dependent f(T) analysis.

    Journal Title

    Solid-State Electronics

    Volume

    34

    Issue/Number

    10

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    1103

    Last Page

    1107

    WOS Identifier

    WOS:A1991GJ36300011

    ISSN

    0038-1101

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