Title

Optimal Cmos Interconnect Width Design In Electromigration-Free Material

Authors

Authors

J. S. Yuan

Comments

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Abbreviated Journal Title

Int. J. Electron.

Keywords

Engineering, Electrical & Electronic

Abstract

An optimal width design for an electromigration-free interconnect in CMOS technology has been developed. The interconnect width is minimized to account for interconnect capacitance and electromigration effects. The analytical solution provides insights into interconnect and circuit sensitivities. Optimization of the interconnect width for a given maximum current density is presented. This technique offers a fast turn-around design time compared with iterative circuit simulations.

Journal Title

International Journal of Electronics

Volume

71

Issue/Number

5

Publication Date

1-1-1991

Document Type

Article

Language

English

First Page

771

Last Page

779

WOS Identifier

WOS:A1991GQ18600005

ISSN

0020-7217

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