Optimal Cmos Interconnect Width Design In Electromigration-Free Material

    Authors

    J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    Engineering, Electrical & Electronic

    Abstract

    An optimal width design for an electromigration-free interconnect in CMOS technology has been developed. The interconnect width is minimized to account for interconnect capacitance and electromigration effects. The analytical solution provides insights into interconnect and circuit sensitivities. Optimization of the interconnect width for a given maximum current density is presented. This technique offers a fast turn-around design time compared with iterative circuit simulations.

    Journal Title

    International Journal of Electronics

    Volume

    71

    Issue/Number

    5

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    771

    Last Page

    779

    WOS Identifier

    WOS:A1991GQ18600005

    ISSN

    0020-7217

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