High-Performance P-N-P Heterojunction Bipolar-Transistor Design

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    VELOCITY OVERSHOOT; CAPACITANCE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The performance of P-n-p AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for analog and digital circuit applications is compared to that of N-p-n HBTs. The theoretical analysis shows that the P-n-p HBTs are comparable with N-p-n HBTs in high-speed digital operation, while the N-p-n HBTs exhibit higher cut-off frequency in microwave and millimeter-wave operation. Analytical equations and SPICE circuit simulation are used in support of the comparison between the P-n-p and N-p-n HBTs. Optimization of device doping profile design for P-n-p and N-p-n heterojunction bipolar transistors in analog and digital circuits are presented.

    Journal Title

    Solid-State Electronics

    Volume

    34

    Issue/Number

    12

    Publication Date

    1-1-1991

    Document Type

    Article

    Language

    English

    First Page

    1347

    Last Page

    1352

    WOS Identifier

    WOS:A1991GU72900006

    ISSN

    0038-1101

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