An Improved Early Voltage Model For Advanced Bipolar-Transistors

    Authors

    J. S. Yuan;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    CAPACITANCE; Engineering, Electrical & Electronic; Physics, Applied

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    38

    Issue/Number

    1

    Publication Date

    1-1-1991

    Document Type

    Note

    Language

    English

    First Page

    179

    Last Page

    182

    WOS Identifier

    WOS:A1991EM81100025

    ISSN

    0018-9383

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