Title

An Improved Early Voltage Model For Advanced Bipolar-Transistors

Authors

Authors

J. S. Yuan;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

CAPACITANCE; Engineering, Electrical & Electronic; Physics, Applied

Journal Title

Ieee Transactions on Electron Devices

Volume

38

Issue/Number

1

Publication Date

1-1-1991

Document Type

Note

DOI Link

http://dx.doi.org/10.1109/16.65753

Language

English

First Page

179

Last Page

182

WOS Identifier

WOS:A1991EM81100025

ISSN

0018-9383

Recommended Citation

"An Improved Early Voltage Model For Advanced Bipolar-Transistors" (1991). Faculty Bibliography 1990s. 384.
https://stars.library.ucf.edu/facultybib1990/384