Title

Effects Of Using Minority Hole Mobility In N+ Emitter On Bipolar Device Modeling

Authors

Authors

J. S. Yuan; C. S. Yeh;B. Gadepally

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

HEAVILY DOPED SILICON; CARRIER DIFFUSION-COEFFICIENTS; TRANSPORT; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Journal Title

Solid-State Electronics

Volume

34

Issue/Number

12

Publication Date

1-1-1991

Document Type

Note

DOI Link

http://dx.doi.org/10.1016/0038-1101(91)90046-2

Language

English

First Page

1460

Last Page

1462

WOS Identifier

WOS:A1991GU72900024

ISSN

0038-1101

Recommended Citation

"Effects Of Using Minority Hole Mobility In N+ Emitter On Bipolar Device Modeling" (1991). Faculty Bibliography 1990s. 387.
https://stars.library.ucf.edu/facultybib1990/387