Effects Of Using Minority Hole Mobility In N+ Emitter On Bipolar Device Modeling

    Authors

    J. S. Yuan; C. S. Yeh;B. Gadepally

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    HEAVILY DOPED SILICON; CARRIER DIFFUSION-COEFFICIENTS; TRANSPORT; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Journal Title

    Solid-State Electronics

    Volume

    34

    Issue/Number

    12

    Publication Date

    1-1-1991

    Document Type

    Note

    Language

    English

    First Page

    1460

    Last Page

    1462

    WOS Identifier

    WOS:A1991GU72900024

    ISSN

    0038-1101

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