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Abbreviated Journal Title

Phys. Rev. B

Keywords

Two-Dimensional System; Strong Magnetic-Fields; Electron Localization; Resistance; Scattering; Physics; Condensed Matter

Abstract

Deviations from perfect quantization of the Hall resistivity rho(yx) at integer filling factors have recently been observed in Si metal-oxide-semiconductor field-effect transistors. We demonstrate how scattering between degenerate states at the edges in a quantum Hall system can lead to size-dependent deviations in rho(yx) from its quantized values. While the Hall resistivity fluctuates, the current flows without dissipation along the channel due to the absence of backscattering.

Journal Title

Physical Review B

Volume

46

Issue/Number

3

Publication Date

1-1-1992

Document Type

Note

Language

English

First Page

1901

Last Page

1904

WOS Identifier

WOS:A1992JE62600090

ISSN

0163-1829

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