Abbreviated Journal Title
Phys. Rev. B
Two-Dimensional System; Strong Magnetic-Fields; Electron Localization; Resistance; Scattering; Physics; Condensed Matter
Deviations from perfect quantization of the Hall resistivity rho(yx) at integer filling factors have recently been observed in Si metal-oxide-semiconductor field-effect transistors. We demonstrate how scattering between degenerate states at the edges in a quantum Hall system can lead to size-dependent deviations in rho(yx) from its quantized values. While the Hall resistivity fluctuates, the current flows without dissipation along the channel due to the absence of backscattering.
Physical Review B
Heinonen, O., "Deviations From Perfect Integer Quantum Hall-Effect" (1992). Faculty Bibliography 1990s. 473.