Simple-Model For The Saturation Voltage And Current Of Submicron Mosfets

    Authors

    J. J. Liou

    Comments

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    Abbreviated Journal Title

    Int. J. Electron.

    Keywords

    Engineering, Electrical & Electronic

    Abstract

    A simple but reasonably accurate model is presented for the saturation voltage and current of submicron MOSFETs in strong inversion. Relevant device physics such as the effects of short channel, narrow channel, and the voltage drop along the channel caused by the drain voltage are accounted for in a first-order manner. The conventional model is also derived from the present model by employing several approximations. It is shown that the present model compares more favourably with PISCES device simulation results and that the conventional model can overestimate the saturation I-V characteristics by about 30% for a typical submicron MOSFET. We further suggest that the error caused by the conventional model is smaller for a MOSFET having a shorter channel, a wider channel, or/and a lower impurity doping concentration.

    Journal Title

    International Journal of Electronics

    Volume

    73

    Issue/Number

    3

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    560

    Last Page

    567

    WOS Identifier

    WOS:A1992JQ95300010

    ISSN

    0020-7217

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