Semiconductor-Device Physics And Modeling .1. Overview Of Fundamental Theories And Equations

    Authors

    J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Keywords

    Semiconductor Devices; Modeling; Simulation; Silicon; Engineering, Electrical & Electronic

    Abstract

    The mathematical physics related to semiconductor materials and devices is reviewed, and its relevance and application to the commonly used semiconductor device equations and models is discussed. An overview is given to provide a methodical link between the fundamental theories and equations. The fundamental theories start from the wave and particle properties of electrons and the statistics of free carriers in semiconductors. This, together with the effective mass concept, leads to the energy band structure of semiconductors. Based on the principle of momentum conservation and the free-carrier statistics, we also derive the Boltzmann transport equation, which is considered the most fundamental equation for semiconductor device physics. The widely used drift-diffusion equations are then obtained from the Boltzmann transport equation by using several assumptions such as the relaxation-time approximation and that the semiconductor is isothermal. A summary of the basic equations used in classic device physics is also included.

    Journal Title

    Iee Proceedings-G Circuits Devices and Systems

    Volume

    139

    Issue/Number

    6

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    646

    Last Page

    654

    WOS Identifier

    WOS:A1992KD33800004

    ISSN

    0956-3768

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