Optically Driven Photoconductive Devices For Power Switching Application .2. Thermal Modeling Including Heat Sink

    Authors

    J. J. Liou;J. S. Yuan

    Comments

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    Keywords

    Photoconductive Devices; Diodes; Power Switching; Semiconductors Devices; Engineering, Electrical & Electronic

    Abstract

    The removal of heat generated in power devices using a heat sink is increasingly important for packaging and reliability, particularly for the photoconductive circuit element (PCE) which can conduct a large current when used as a high power switch. The paper presents a thermal model for estimating the relationship between the temperature in a p+-i-n+ PCE and the required geometry of the heat sink under steady-state dark and illuminated operations. The model is based on a one-dimensional heat-transfer analysis and relevant semiconductor device physics. Given the bias condition, the geometry and the material for the PCE, and the material for the heat sink, the model can predict the area of the heat sink needed for a desired temperature in the device. Calculations for different semiconductor thicknesses, different metals (aluminum and copper), different semiconductors (Si and GaAs), different applied voltages, different levels of optical excitation and different device operations (turn-on and turn-off operations) are illustrated.

    Journal Title

    Iee Proceedings-G Circuits Devices and Systems

    Volume

    139

    Issue/Number

    3

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    350

    Last Page

    355

    WOS Identifier

    WOS:A1992JA38600012

    ISSN

    0956-3768

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