Determination Of Bound-Electronic And Free-Carrier Nonlinearities In Znse, Gaas, Cdte, And Znte

    Authors

    A. A. Said; M. Sheikbahae; D. J. Hagan; T. H. Wei; J. Wang; J. Young;E. W. Vanstryland

    Comments

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    Abbreviated Journal Title

    J. Opt. Soc. Am. B-Opt. Phys.

    Keywords

    2-Photon Absorption; Optical Bistability; Single-Beam; Semiconductors; Insb; Refraction; Dependence; Optics

    Abstract

    We extend the application of the Z-scan experimental technique to determine free-carrier nonlinearities in the presence of bound electronic refraction and two-photon absorption. We employ this method, using picosecond pulses in CdTe, GaAs, and ZnTe at 1.06-mu-m and in ZnSe at 1.06 and 0.53-mu-m, to measure the refractive-index change induced by two-photon-excited free carriers (coefficient sigma(r)), the two-photon absorption coefficient beta, and the bound electronic nonlinear refractive index n2. The real and imaginary parts of the third-order susceptibility (i.e., n2 and beta, respectively) are determined by Z scans with low inputs, and the refraction from carriers generated by two-photon absorption (an effective fifth-order nonlinearity) is determined from Z scans with higher input energies. We compare our experimental results with theoretical models and deduce that the three measured parameters are well predicted by simple two-band models. n2 changes from positive to negative as the photon energy approaches the band edge, in accordance with a recent theory of the dispersion of n2 in solids based on Kramers-Kronig transformations [Phys. Rev. Lett. 65, 96 (1990); IEEE J. Quantum Electron. 27, 1296 (1991)]. We find that the values of sigma(r) are in agreement with simple band-filling models.

    Journal Title

    Journal of the Optical Society of America B-Optical Physics

    Volume

    9

    Issue/Number

    3

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    405

    Last Page

    414

    WOS Identifier

    WOS:A1992HG73300015

    ISSN

    0740-3224

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