Auger-Electron Spectroscopy And Secondary-Ion Mass-Spectroscopy Study Of Interdiffusion In Gold Bismuth Oxide And Aluminum Bismuth Oxide Thin-Films

    Authors

    K. B. Sundaram; A. L. Grogan;S. S. Seshan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Mater. Sci.-Mater. Electron.

    Keywords

    Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Thin-film bismuth oxide systems were prepared by depositing gold or aluminium on glass substrates, followed by deposition of bismuth over the gold or aluminium metal layer, after which thermal oxidation was carried out to yield a Bi2O3 layer. Auger electron spectroscopy (AES) and secondary-ion mass spectroscopy (SIMS) were performed on these thin-film systems. AES results show that the average stoichiometry of bismuth oxide films is represented by Bi2O3. SIMS analysis suggests that the oxidation process results in extensive interdiffusion for the BiO(x)-Al-glass system. The extent of interdiffusion in the BiO(x)-Au glass system is certainly far less extensive than in the BiO(x)-Al-glass system.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    3

    Issue/Number

    4

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    257

    Last Page

    262

    WOS Identifier

    WOS:A1992KD36200013

    ISSN

    0957-4522

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