2-Dimensional Analysis Of Ion-Implanted, Bipolar-Compatible, Long-Channel And Short-Channel Junction Field-Effect Transistors

    Authors

    W. S. W. Wong;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Mesfets; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A two-dimensional analysis of ion-implanted, bipolar-compatible, long- and short-channel JFET's is presented. Aided by the two-dimensional device simulator PISCES, we study the steady-state characteristics of the JFET's. Besides analyzing the linear and saturation regions, our simulation gives insight about the transition region between the linear and saturation regions, the details of which conventional theory fails to provide. In contrast to the long-channel JFET, short-channel JFET behavior deviates considerably from the conventional theory developed based on the gradual channel approximation. This deviation occurs because the x-direction electric field in the channel of the short-channel JFET is much stronger than that in the long-channel JFET, thus invalidating the approach of separating the x and y components used in the long-channel device. Our study shows that the short-channel JFET has several properties that were not previously emphasized: a) no pinch-off in saturation operation; b) free-carrier drift velocity saturates in saturation operation; and c) power-law I-V characteristics in the cutoff region. The details regarding the shape of the conducting channel, the electric field vectors, the current vectors, and the current-voltage characteristics are provided.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    39

    Issue/Number

    11

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    2576

    Last Page

    2583

    WOS Identifier

    WOS:A1992JU73700021

    ISSN

    0018-9383

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