High-Quality Yba2Cu3O7-Delta Thin-Films Grown On Srlaalo4(001) And (1118) Substrates

    Authors

    K. H. Young;B. H. T. Chai

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 2 - Lett.

    Keywords

    Srlaaio4; Yba2Cu3O7-Delta; Low-Loss Substrate; Laser Ablation; Epitaxy; Microwave; Physics, Applied

    Abstract

    SrLaAlO4 (SLAO) was used as a substrate for the epitaxial growth of YBa2Cu3O7-delta (YBCO) thin films. This material has dielectric properties comparable to those of the commonly used LaAlO3 substrate. The lattice mismatch between SLAO (001) and YBCO (001) is about 3%. Two substrate orientations, cleaved (001) and polished (1118), have been used in this study. YBCO thin films were grown epitaxially from both orientations by in situ laser ablation. The stepped morphology of the cleaved SLAO (001) surface promoted the growth of YBCO along the a-axis. In the case of the SLAO (1118), YBCO (1118) was grown with its c-axis aligned along the c-axis of SLAO. The YBCO (1118) has a T(c) of over 90 K with a transition width of 0.5 K, which indicates a high-quality superconductor.

    Journal Title

    Japanese Journal of Applied Physics Part 2-Letters

    Volume

    31

    Issue/Number

    4A

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    L402

    Last Page

    L405

    WOS Identifier

    WOS:A1992HP06500010

    ISSN

    0021-4922

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