Collector Base Junction Capacitance Of Advanced Bipolar-Transistors Operating At Avalanche Breakdown

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi A-Appl. Res.

    Keywords

    Multiplication; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Modeling of the collector-base junction capacitance of the advanced bipolar transistors operating at avalanche breakdown is developed. The comprehensive junction capacitance model accounts for high current and high field effects at the collector-base junction. The impact ionization generates tremendous amount of free carriers in the collector-base space-charge region which increases the collector-base junction capacitance at the avalanche breakdown regime. The present collector-base junction capacitance is useful for device and circuit design under avalanche breakdown prior to the actual fabrication of the circuit.

    Journal Title

    Physica Status Solidi a-Applied Research

    Volume

    134

    Issue/Number

    2

    Publication Date

    1-1-1992

    Document Type

    Article

    Language

    English

    First Page

    575

    Last Page

    581

    WOS Identifier

    WOS:A1992KH81600026

    ISSN

    0031-8965

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