The Effects Of Space-Charge-Layer Thickness Modulation On Diffusion Capacitance

    Authors

    J. J. Liou;A. Ortizconde

    Comments

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    Abbreviated Journal Title

    Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.

    Keywords

    Semiconductor Devices And Device Physics; P/N Junctions; Bipolar Devices; Physics, Applied

    Abstract

    The effect of junction space-charge-layer thickness modulation is normally omitted in the conventional diffusion capacitance model. This note calculates the diffusion capacitance including such an effect and investigates the errors introduced by the conventional model under a wide range of bias conditions, as well as for different doping concentrations, different layer thicknesses, and different temperatures.

    Journal Title

    Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers

    Volume

    33

    Issue/Number

    11

    Publication Date

    1-1-1994

    Document Type

    Note

    Language

    English

    First Page

    6148

    Last Page

    6149

    WOS Identifier

    WOS:A1994QB82700014

    ISSN

    0021-4922

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