Title
A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas/Gaas Multi-Finger Hbts
Abbreviated Journal Title
Solid-State Electron.
Keywords
Heterojunction Bipolar-Transistors; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail.
Journal Title
Solid-State Electronics
Volume
38
Issue/Number
7
Publication Date
1-1-1995
Document Type
Article
Language
English
First Page
1339
Last Page
1346
WOS Identifier
ISSN
0038-1101
Recommended Citation
"A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas/Gaas Multi-Finger Hbts" (1995). Faculty Bibliography 1990s. 756.
https://stars.library.ucf.edu/facultybib1990/756
Comments
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