A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas/Gaas Multi-Finger Hbts

    Authors

    A. Kager; J. J. Liou;C. I. Huang

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Heterojunction Bipolar-Transistors; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail.

    Journal Title

    Solid-State Electronics

    Volume

    38

    Issue/Number

    7

    Publication Date

    1-1-1995

    Document Type

    Article

    Language

    English

    First Page

    1339

    Last Page

    1346

    WOS Identifier

    WOS:A1995RD57900010

    ISSN

    0038-1101

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