A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas/Gaas Multi-Finger Hbts
Abbreviated Journal Title
Heterojunction Bipolar-Transistors; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail.
"A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas/Gaas Multi-Finger Hbts" (1995). Faculty Bibliography 1990s. 756.