Deposition Parameters Studies Of Silicon-Nitride Films Prepared By Plasma-Enhanced Cvd Process Using Silane Ammonia

    Authors

    K. R. Lee; K. B. Sundaram;D. C. Malocha

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.-Mater. Electron.

    Keywords

    Dioxide; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, r.f. power, time of deposition and electrode spacing, on the deposition and etch rates were investigated and experimental results are presented.

    Journal Title

    Journal of Materials Science-Materials in Electronics

    Volume

    4

    Issue/Number

    4

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    283

    Last Page

    287

    WOS Identifier

    WOS:A1993ML56300007

    ISSN

    0957-4522

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