Theoretical Prediction Of The Performance Of Si And Sic Bipolar-Transistors Operating At High-Temperatures

    Authors

    J. J. Liou;A. Kager

    Comments

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    Keywords

    Bipolar Transistors; Silicon; Silicon Carbide; Cutoff Frequency; Majority Carrier Concentration; Engineering, Electrical & Electronic

    Abstract

    Silicon carbide (SiC) is a promising material for semiconductor devices operated at high temperatures because of its large energy bandgap, high thermal conductivity and silicon compatibility. This paper develops an analytical model to predict and compare the d.c and a.c performance of SiC and conventional Si bipolar junction transistors (BJTs) at high temperatures. Based on the device parameters available in the literature, our calculations show that the SiC BJT indeed possesses a higher current gain than its silicon counterpart as the temperature is increased beyond 500 K. This is primarily because SiC has a larger bandgap than Si. As a result, at high temperatures, the majority carrier concentration in the base of the SiC BJT remains the same value as the doping concentration, whereas the majority carrier concentration in the base of the Si BJT increases considerably beyond the doping concentration. The cutoff frequency of the SiC BJT, however, decreases and becomes smaller than that of the Si BJT when the temperature increases. We suggest this is caused by a faster decrease in the electron mobility of SiC than of Si as the temperature is increased. The model compares favourably with data measured from a typical Si BJT.

    Journal Title

    Iee Proceedings-G Circuits Devices and Systems

    Volume

    140

    Issue/Number

    4

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    289

    Last Page

    293

    WOS Identifier

    WOS:A1993LW32000009

    ISSN

    0956-3768

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