Title
A Physics-Based, Analytical Heterojunction Bipolar-Transistor Model Including Thermal And High-Current Effects
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
P-N; Algaas/Gaas; Resistance; Time; Hbts; Engineering, Electrical & Electronic; Physics, Applied
Abstract
We present a detailed, analytical model to predict the dc and high-frequency performance of AlGaAs/GaAs graded heterojunction bipolar transistors (HBT's). The model is developed based on the relevant device physics such as current-induced base pushout and thermal effect. The current gain, cutoff frequency, and maximum frequency versus the collector current density, which is a function of the applied voltage as well as the corresponding temperature in the HBT, are calculated. Our results suggest that the conventional HBT model, which assumes the HBT temperature is the same as that of the ambient, can overestimate the three figures of merit considerably when the collector current density is high. Furthermore, it is shown that the present model correctly explains the experimentally observed HBT high-current behavior like the rapid fall-off of the current gain and cutoff frequency. The model predictions compare favorably with the results obtained from a model which solves numerically the Poisson and continuity equations coupled with the lattice heat equation.
Journal Title
Ieee Transactions on Electron Devices
Volume
40
Issue/Number
9
Publication Date
1-1-1993
Document Type
Article
DOI Link
Language
English
First Page
1570
Last Page
1577
WOS Identifier
ISSN
0018-9383
Recommended Citation
"A Physics-Based, Analytical Heterojunction Bipolar-Transistor Model Including Thermal And High-Current Effects" (1993). Faculty Bibliography 1990s. 838.
https://stars.library.ucf.edu/facultybib1990/838
Comments
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