Title

Electrochemical Etching Of Silicon By Hydrazine

Authors

Authors

K. B. Sundaram;H. W. Chang

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Electrochem. Soc.

Keywords

Aqueous Koh; Anodic-Dissolution; Ethylenediamine-Pyrocatechol; Stop; Mechanism; Passivation; Dependence; Electrochemistry; Materials Science, Coatings & Films

Abstract

The anodic dissolution and passivation of n- and p-type Si in different concentrations etching temperatures were studies. During etching, performed at 70 and 90-degrees-C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value. A linear I-V relation was observed for the room temperature etching. A mechanism, which accounts for the solution as under different biasing conditions, is proposed to give a qualitative explanation of the different I-V behaviors for n- and p-type semiconductors.

Journal Title

Journal of the Electrochemical Society

Volume

140

Issue/Number

6

Publication Date

1-1-1993

Document Type

Article

Language

English

First Page

1592

Last Page

1597

WOS Identifier

WOS:A1993LG41000021

ISSN

0013-4651

Share

COinS