Electrochemical Etching Of Silicon By Hydrazine

    Authors

    K. B. Sundaram;H. W. Chang

    Comments

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    Abbreviated Journal Title

    J. Electrochem. Soc.

    Keywords

    Aqueous Koh; Anodic-Dissolution; Ethylenediamine-Pyrocatechol; Stop; Mechanism; Passivation; Dependence; Electrochemistry; Materials Science, Coatings & Films

    Abstract

    The anodic dissolution and passivation of n- and p-type Si in different concentrations etching temperatures were studies. During etching, performed at 70 and 90-degrees-C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value. A linear I-V relation was observed for the room temperature etching. A mechanism, which accounts for the solution as under different biasing conditions, is proposed to give a qualitative explanation of the different I-V behaviors for n- and p-type semiconductors.

    Journal Title

    Journal of the Electrochemical Society

    Volume

    140

    Issue/Number

    6

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    1592

    Last Page

    1597

    WOS Identifier

    WOS:A1993LG41000021

    ISSN

    0013-4651

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