A Non-Quasi-Static Small-Signal Model for Metal-Semiconductor Junction Diodes

    Authors

    J. J. Liou; K. Lee; S. M. Knapp; K. B. Sundaram; J. S. Yuan; D. C. Malocha;M. Belkerdid

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Keywords

    Schottky-barrier diode; Transistors; Capacitance; transport; contacts; layers; IV; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al-Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high.

    Journal Title

    Solid-State Electronics

    Volume

    33

    Issue/Number

    12

    Publication Date

    1-1-1990

    Document Type

    Article

    Language

    English

    First Page

    1629

    Last Page

    1632

    WOS Identifier

    WOS:A1990EP15200015

    ISSN

    0038-1101

    Share

    COinS