Switch-Off Transient Analysis For Heterojunction Bipolar-Transistors In Saturation

    Authors

    J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    CHARGE-CONTROL MODEL; DC CHARACTERISTICS; TIME; VOLTAGE; HBTS; BASE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Transient analysis of the heterojunction bipolar transistors switched from saturation to cutoff has been developed. The minority charges stored in the base and collector as a function of time are derived. The storage time of the heterojunction bipolar transistor is determined from the minority charge stored in the collector. The storage time can be significantly reduced using double heterojunction bipolar transistors. The present analysis is useful for determining non-quasi-static collector current during switch-off transient.

    Journal Title

    Solid-State Electronics

    Volume

    36

    Issue/Number

    9

    Publication Date

    1-1-1993

    Document Type

    Article

    Language

    English

    First Page

    1261

    Last Page

    1266

    WOS Identifier

    WOS:A1993LQ00700006

    ISSN

    0038-1101

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