Modeling The Reverse Base Current Phenomenon Due To Avalanche Effect In Advanced Bipolar-Transistors

    Authors

    J. J. Liou;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Engineering, Electrical & Electronic; Physics, Applied

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    37

    Issue/Number

    10

    Publication Date

    1-1-1990

    Document Type

    Note

    Language

    English

    First Page

    2274

    Last Page

    2276

    WOS Identifier

    WOS:A1990EA28100023

    ISSN

    0018-9383

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