Title

Modeling The Reverse Base Current Phenomenon Due To Avalanche Effect In Advanced Bipolar-Transistors

Authors

Authors

J. J. Liou;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering, Electrical & Electronic; Physics, Applied

Journal Title

Ieee Transactions on Electron Devices

Volume

37

Issue/Number

10

Publication Date

1-1-1990

Document Type

Note

DOI Link

http://dx.doi.org/10.1109/16.59921

Language

English

First Page

2274

Last Page

2276

WOS Identifier

WOS:A1990EA28100023

ISSN

0018-9383

Recommended Citation

"Modeling The Reverse Base Current Phenomenon Due To Avalanche Effect In Advanced Bipolar-Transistors" (1990). Faculty Bibliography 1990s. 98.
https://stars.library.ucf.edu/facultybib1990/98