Abbreviated Journal Title
J. Appl. Phys.
Keywords
Physics; Applied
Abstract
A more accurate intrinsic concentration was suggested recently. Discrepancies between using the conventional and the more accurate intrinsic concentrations on bipolar transistor modeling are assessed in this study. Our calculations show that the conventional intrinsic concentration overestimates the collector and base currents by a factor of 1.5 to 2 but affects less severely the steady‐state current gain.
Journal Title
Journal of Applied Physics
Volume
68
Issue/Number
11
Publication Date
1-1-1990
Document Type
Article
DOI Link
Language
English
First Page
5911
Last Page
5912
WOS Identifier
ISSN
0021-8979
Recommended Citation
Liou, J. J.; Yuan, J. S.; and Wong, W. W., "Effects Of Using The More Accurate Intrinsic Concentration On Bipolar-Transistor Modeling" (1990). Faculty Bibliography 1990s. 99.
https://stars.library.ucf.edu/facultybib1990/99
Comments
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