Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires

    Authors

    H. T. Wang; Z. P. Xie; W. Y. Yang; J. Y. Fang;L. N. An

    Comments

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    Abbreviated Journal Title

    Cryst. Growth Des.

    Keywords

    SILICON-CARBIDE NANOWIRES; INDIUM-PHOSPHIDE NANOWIRES; FIELD-EMISSION; PROPERTIES; BUILDING-BLOCKS; NANORODS; SEMICONDUCTOR; CRYSTALS; NANOSTRUCTURES; DIAMETER; ARRAYS; Chemistry, Multidisciplinary; Crystallography; Materials Science, ; Multidisciplinary

    Abstract

    In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.

    Journal Title

    Crystal Growth & Design

    Volume

    8

    Issue/Number

    11

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    3893

    Last Page

    3896

    WOS Identifier

    WOS:000260675500005

    ISSN

    1528-7483

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