Abbreviated Journal Title
J. Appl. Phys.
Keywords
THERMAL-CONDUCTIVITY; Physics, Applied
Abstract
Molecular dynamics simulations are used to study the scattering of phonon wave packets of well-defined frequency and polarization from individual point defects and from a field of point defects in Si. The relative amounts of energy in the transmitted and reflected phonon fields are calculated and the parameters that influence the phonon scattering process are determined. The results show that the fractions of transmitted and reflected energies strongly depend on the frequency of the incident phonons and on the mass and concentration of the defects. These results are compared with the classic formula for the scattering strength for point defects derived by Klemens, which we find to be valid when each phonon-defect scattering event is independent. The Klemens formula fails when coupled multiple scattering dominates. The phonon density of states is used to characterize the effects of point defects on mode mixing.
Journal Title
Journal of Applied Physics
Volume
104
Issue/Number
2
Publication Date
1-1-2008
Document Type
Article
DOI Link
Language
English
First Page
10
WOS Identifier
ISSN
0021-8979
Recommended Citation
Yao, M.; Watanabe, T.; Schelling, P. K.; Keblinski, P.; Cahill, D. G.; and Phillpot, S. R., "Phonon-defect scattering in doped silicon by molecular dynamics simulation" (2008). Faculty Bibliography 2000s. 1178.
https://stars.library.ucf.edu/facultybib2000/1178
Comments
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