Conductivity of oriented samaria-doped ceria thin films grown by oxygen-plasma-assisted molecular beam epitaxy

    Authors

    Z. Q. Yu; Svnt Kuchibhatla; L. V. Saraf; O. A. Marina; C. M. Wang; M. H. Engelhard; V. Shutthanandan; P. Nachimuthu;S. Thevuthasan

    Comments

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    Abbreviated Journal Title

    Electrochem. Solid State Lett.

    Keywords

    DEPENDENT ELECTRICAL-CONDUCTIVITY; NANOCRYSTALLINE CERIA; IONIC-CONDUCTIVITY; POLYCRYSTALLINE; MICROSTRUCTURE; ELECTROLYTE; OXIDES; Electrochemistry; Materials Science, Multidisciplinary

    Abstract

    We have used oxygen-plasma-assisted molecular beam epitaxy to grow highly oriented Ce1-xSmxO2-delta films on single-crystal c-Al2O3. The samarium concentration x was varied in the range of 1-33 atom %. It was observed that dominant (111) orientation in Ce1-xSmxO2-delta films can be maintained up to about 10 atom % samarium concentration. Films higher than 10 atom % Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S cm(-1) at 600 degrees C was observed for films with similar to 5 atom % Sm concentration. A loss of orientation, triggering an enhanced grain-boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations. (c) 2008 The Electrochemical Society.

    Journal Title

    Electrochemical and Solid State Letters

    Volume

    11

    Issue/Number

    5

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    B76

    Last Page

    B78

    WOS Identifier

    WOS:000253989800012

    ISSN

    1099-0062

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