CMOS RF design for reliability using adaptive gate-source biasing

    Authors

    J. S. Yuan;H. Tang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    adaptive biasing; channel hot electron (CHE); gate oxide breakdown; negative-bias temperature instability (NBTI); power amplifier; power-added efficiency; radio frequency (RF); third-order intercept; point; HOT-CARRIER STRESS; OXIDE BREAKDOWN; SOFT-BREAKDOWN; DEGRADATION; PERFORMANCE; MOSFET; MODEL; ELECTRON; TECHNOLOGY; AMPLIFIERS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    An adaptive gate-source biasing scheme to improve the MOSFET RF circuit reliability is presented. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in the drain current subjected to various device reliability mechanisms. The MOS dc circuit using the adaptive technique is less sensitive to a threshold voltage and mobility degradations from a long-term stress effect. A class-AB RF power amplifier example shows that the use of a source resistance makes the power-added efficiency robust against the threshold voltage and mobility variations, whereas the use of a source inductance is more reliable for the input third-order intercept point.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    55

    Issue/Number

    9

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    2348

    Last Page

    2353

    WOS Identifier

    WOS:000258914000008

    ISSN

    0018-9383

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