HfO2 Gate Breakdown and Channel Hot Electron Effect on MOSFET Third-Order Intermodulation

    Authors

    J. S. Yuan;C. Z. Yu

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Breakdown (BD) location; channel hot electron; gate oxide breakdown; high-k transistors; intermodulation distortion (IMD); radio frequency; (RF); third-order intercept point.; CMOS; PERFORMANCE; LINEARITY; DEGRADATION; BEHAVIOR; SUBJECT; DEVICE; IMPACT; LAYER; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The effect of n-channel hot electron and p-channel gate oxide breakdown (BD) on the third-order intermodulation of HfO2 MOS transistors has been studied. Both reliability physics mechanisms result in a similar shift of the intermodulation intercept point characteristics versus the absolute value of gate-source voltage. However, the device VIP3 in the subthreshold region is sensitive to BD leakage current and BD location effect. The third-order input intercept point as function of stress time was evaluated experimentally and compared with the analytical model predictions. A good agreement between the model predictions and experimental data is obtained.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    55

    Issue/Number

    10

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    2790

    Last Page

    2794

    WOS Identifier

    WOS:000260252700032

    ISSN

    0018-9383

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