ZnxCd1-xS as a heterojunction partner for CuIn1-xGaxS2 thin film solar cells

    Authors

    B. Kumar; P. Vasekar; S. A. Pethe; N. G. Dhere;G. I. Koishiyev

    Abstract

    Zinc cadmium sulfide (ZnxCd1-xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1-xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1-xS devices have also shown higher open circuit voltage, V-oc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher V-oc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1-xS devices. (C) 2008 Elsevier B.V. All rights reserved.

    Journal Title

    Thin Solid Films

    Volume

    517

    Issue/Number

    7

    Publication Date

    1-1-2009

    Document Type

    Article

    First Page

    2295

    Last Page

    2299

    WOS Identifier

    WOS:000263847300045

    ISSN

    0040-6090

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