Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices

    Authors

    D. A. May-Arrioja; N. Bickel; A. Alejo-Molina; M. Torres-Cisneros; J. J. Sanchez-Mondragon;P. Likamwa

    Comments

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    Abstract

    The intermixing characteristics of three widely used combinations of InP-based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that the bandgap energy shift is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, which leads to a simple way to obtain three different bandgaps in a single intermixing step. (C) 2008 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Journal

    Volume

    40

    Issue/Number

    3

    Publication Date

    1-1-2009

    Document Type

    Article

    First Page

    574

    Last Page

    576

    WOS Identifier

    WOS:000264694700054

    ISSN

    0026-2692

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