Title
A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs
Abbreviated Journal Title
Semicond. Sci. Technol.
Keywords
DRAIN RESISTANCES; PARAMETER EXTRACTION; THRESHOLD VOLTAGE; ELECTRON-MOBILITY; PARASITIC SOURCE; CHANNEL-LENGTH; DIFFERENCE; TRANSISTORS; MODEL; OXIDE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter
Abstract
A new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models. It also allows us to extract the device's channel conductance. The procedure is not based on fitting, but on directly calculating the three parameters by solving a system of three simultaneous equations. The equations represent the measured source-to-drain output resistance, obtained from the output characteristics, and its first and second integrals with respect to gate voltage. This method may be applied to a single device, measured in strong inversion as a function of gate voltage, at a small drain bias.
Journal Title
Semiconductor Science and Technology
Volume
24
Issue/Number
10
Publication Date
1-1-2009
Document Type
Article
Language
English
First Page
6
WOS Identifier
ISSN
0268-1242
Recommended Citation
"A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs" (2009). Faculty Bibliography 2000s. 1927.
https://stars.library.ucf.edu/facultybib2000/1927
Comments
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