A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

    Authors

    J. Muci; D. C. L. Munoz; A. D. L. Rey; A. Ortiz-Conde; F. J. Garcia-Sanchez; C. S. Ho;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Semicond. Sci. Technol.

    Keywords

    DRAIN RESISTANCES; PARAMETER EXTRACTION; THRESHOLD VOLTAGE; ELECTRON-MOBILITY; PARASITIC SOURCE; CHANNEL-LENGTH; DIFFERENCE; TRANSISTORS; MODEL; OXIDE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter

    Abstract

    A new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models. It also allows us to extract the device's channel conductance. The procedure is not based on fitting, but on directly calculating the three parameters by solving a system of three simultaneous equations. The equations represent the measured source-to-drain output resistance, obtained from the output characteristics, and its first and second integrals with respect to gate voltage. This method may be applied to a single device, measured in strong inversion as a function of gate voltage, at a small drain bias.

    Journal Title

    Semiconductor Science and Technology

    Volume

    24

    Issue/Number

    10

    Publication Date

    1-1-2009

    Document Type

    Article

    Language

    English

    First Page

    6

    WOS Identifier

    WOS:000270219600015

    ISSN

    0268-1242

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