Title

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

Authors

Authors

A. Ortiz-Conde; F. J. Garcia-Sanchez; J. Muci; D. C. L. Munoz; A. D. L. Rey; C. S. Ho;J. J. Liou

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

EFFECTIVE CHANNEL-LENGTH; SERIES-RESISTANCE; THRESHOLD VOLTAGE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the I(D)(V(GS), V(DS)) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct fitting to the drain current and indirect fitting to the measured source-to-drain resistance. The indirect fitting is shown to be advantageous in terms of fewer number of iterations needed and wider extent of initial guess values range. (C) 2009 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

49

Issue/Number

7

Publication Date

1-1-2009

Document Type

Article

Language

English

First Page

689

Last Page

692

WOS Identifier

WOS:000268532600003

ISSN

0026-2714

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