Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

    Authors

    A. Ortiz-Conde; F. J. Garcia-Sanchez; J. Muci; D. C. L. Munoz; A. D. L. Rey; C. S. Ho;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    EFFECTIVE CHANNEL-LENGTH; SERIES-RESISTANCE; THRESHOLD VOLTAGE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the I(D)(V(GS), V(DS)) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct fitting to the drain current and indirect fitting to the measured source-to-drain resistance. The indirect fitting is shown to be advantageous in terms of fewer number of iterations needed and wider extent of initial guess values range. (C) 2009 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    49

    Issue/Number

    7

    Publication Date

    1-1-2009

    Document Type

    Article

    Language

    English

    First Page

    689

    Last Page

    692

    WOS Identifier

    WOS:000268532600003

    ISSN

    0026-2714

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